This project has received funding from the *ECSEL Joint Undertaking (JU) under grant agreement No 783274. The JU receives support from the European Union’s Horizon 2020 research and innovation programme and France, Germany, Slovakia, Netherlands, Sweden, Italy, Luxembourg, Ireland.

*replaced by Key Digital Technologies Joint Undertaking

3-5 Lab

Sébastien Aroulanda

GaN HEMT devices for V- to E-Band applications

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STUBA

Jaroslav Kováč

Characterization and simulation of power devices electro-thermal properties

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UMS

Daniel Sommer

GaN/SiC technology optimisation for 5G applications up to Ka band

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SweGaN

Jr-Tai Chen

Scaling of GaN channel thickness in buffer-free GaN -on SiC HEMT heterostructures for microwave devices

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CEA Leti

Antoine Chanuel

200mm CMOS compatible GaN/Si HEMT for Ka Band power amplifiers

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FhG IAF

Dirk Schwantuschke

Advanced IAF 100 nm GaN HEMT Technology for 5G E-Band Backhaul Applications

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UMS

Mohammed Ayad

Millimetre-Wave 5G Front End Module on GaN HEMT technology

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Ericsson

Mingquan Bao

A 24-28 GHz Doherty Power Amplifier with 4W Output power and 32% PAE at 6dB OPBO in 150nm GaN Technology

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CEA Leti

Arnaud Garnier

Fan Out Wafer Level Package for 5G telecommunications

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CEA Leti

Vincent Puyal

SPDT and LNA on SOI for 5G applications

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Thales

Ken Rousso

New Ka Band Front-end SiP including two MMIC using UMS GH15-10 process

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Tesat

Jens Freese

20GHz 4W PA in SMD Plastic Package for SatCom Applications

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