Conférence ECTC San Diego
1-4 June, 2021
Reliability of Fan-Out Wafer Level Packaging for III-V RF Power MMICs” (prepared by UMS)
L Maréchal et al
System in package embedding III-V chips by fan-out wafer level packaging for RF applications”
Arnaud Garnier et al
CS Mantech
24-27 May, 2021
Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology
Jan Grünenpütt et al
IMS2021 Atlanta
June, 2021
A 24-28 GHz Doherty Power Amplifier with 4 W Output Power and 32% PAE at 6 dB OPBO in 150 nm GaN Technology
Mingquan Bao et al
WSG-8: Workshop on Highly Linear and Linearized Power Amplifiers for mm-Wave Communications: RFIC Virtual Technical Program | RFIC Symposium (rfic-ieee.org)
Innovative Integrated Solutions for mm-Wave 5G Front Ends, Combining 150nm GaN PA with GaAs Receiver
Eric Leclerc et al
IEEE Microwave and wireless compound Volume 31 issue
6 June, 2021
A 24-28 GHz Doherty Power Amplifier with 4 W Output Power and 32% PAE at 6 dB OPBO in 150 nm GaN Technology
Mingquan Bao et al
5G GaN2 project developing 28GHz, 38GHz and 80GHz demonstrators for 5G cellular network base stations
Dirk Schwantuschke et al
ADEPT, Novy Smokovec, High Tatras, SLOVAKIA
14 – 17 September, 2020
DLTFS study of Emission and Capture processes in InAlGaN/GaN heterostructures with different passivation schemes.
J. Drobny et al
Investigation of Electrically Active Defects in InAlGaN/GaN/SiC HEMT
J. Vadovsky et al
Neural Network based Electrothermal Circuit Model of Power HEMT
A. Chvala et al
Study of Emission and Capture processes in AlGaN/GaN HEMTS for 5G
I. Stuchlikova et al
Newsletter #1
02 January, 2020
MITAV 2019
(Mathematics, Information Technologies and Applied Sciences)
BRNO, CZECH REPUBLIC
Identification of electrical active defects in modern structures based on Gallium Nitride
J. Drobny, A. Kosa, M. Weis, J. Kovac, L. Stuchlikova
ADEPT Štrbské Pleso,
High Tatras, SLOVAKIA
24 – 27 June, 2019
Determination on chip temperature distribution of devices under operation by using Raman microscopy
J. Kováč jr., R. Szobolovszký, M. Florovič, J. Kováč, A. Chvála, T. Vincze
ADEPT Štrbské Pleso, High Tatras, SLOVAKIA
24 – 27 June, 2019
Channel temperature determination of HEMT in quasi-static operation
M. Florovič, R. Szobolovszký, J. Kováč, jr., J. Kováč, A. Chvála, J.-C. Jacquet, S. L. Delage
ADEPT Štrbské Pleso, High Tatras, SLOVAKIA
24 – 27 June, 2019
DLTFS study of GaN/AlGaN/GaN/SiC HEMT heterostructure with different layer compostion
J. Drobný, A. Kopecký, A. Kósa, P. Benko, M. Florovič 1, J. Kováč, jr., Ľ. Stuchlíková, S. L. Delage
ECSEL JU SYMPOSIUM,
BUCHAREST, ROMANIA
17-18 June 2019
5G_GaN2 Overview
Philippe Auxemery
IMS 2019,
BOSTON, USA
2-7 June 2019
International Microwave Symposium
Heterogeneous Integration for WLP RF Transceivers
Didier Floriot, Philippe Auxemery, Jean-Pierre Viaud
19th INTERNATIONAL CONFERENCE ON METALORGANIC VAPOR PHASE EPITAXY
USA
06 March 2019
Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer
Joël Kanyandekwe, Yannick Baine, Jerome Richy, Sylvie Favier, Charles Leroux, Denis Blachier, Yann Mazel, Marc Veillerot, Jean-Paul Barnes, Mrad Mrad, Cindy Wiese, Matthew Charles
ASME 2018 IDETC-CIE,
SAN FRANCISCO, USA
26 – 29 August 2018
Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs
Aleš Chvála, Robert Szobolovszký, Jaroslav Kováč jr., Martin Florovič, Juraj Marek, Luboš Černaj, Patrik Príbytný, Daniel Donoval, Jaroslav Kováč
Journal of Electronic Packaging Vol 143
Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN
Ales Chvala, Robert Szobolovszky, Jaroslav Kovacˇ Jr., Martin Florovicˇ, Juraj Marek, L’ubos-Cernaj, Daniel Donoval, Jaroslav Kovacˇ, Christian Dua, Sylvain L. Delage, Jean-Claude Jacquet